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TN3440A
Discrete POWER & Signal Technologies
TN3440A
C
TO-226
BE
NPN General Purpose Amplifier
This device is designed for use in horizontal driver, class A off-line amplifier and off-line switching applications. Sourced from Process 36.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
250 300 7.0 100 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJC RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Max
TN3440A 1.0 8.0 125 50
Units
W mW/C C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
TN3440A
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
VCEO(sus ) V(BR)CBO ICEO ICEX ICBO IEBO Collector-Emitter Sustaining Voltage* Collector-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current Collector-Cutoff Current Emitter-Cutoff Current IC = 50 mA, IB = 0 IC = 100 A, I E = 0 VCE = 200 V, IB = 0 VCE = 300 V, VBE = 1.5 V VCB = 250 V, IE = 0 VEB = 5.0 V, I C = 0 250 300 50 500 20 20 V V A A A A
ON CHARACTERISTICS
hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage I C = 2.0 mA, VCE = 10 V I C = 20 mA, VCE = 10 V I C = 50 mA, IB = 4.0 mA I C = 50 mA, IB = 4.0 mA 30 40 160 0.5 1.3 V V
SMALL SIGNAL CHARACTERISTICS
fT Cobo Cibo hfe Current Gain - Bandwidth Product Output Capacitance Input Capacitance Small-Signal Current Gain I C = 10 mA, VCE = 10 V, f = 5.0 MHz VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 5.0 V, IC = 0, f = 1.0 MHz I C = 5.0 mA, VCE = 10 V, f = 1.0 kHz 25 15 10 95 MHz pF pF
*Pulse Test: Pulse Width 300 s, Duty Cycle 1.0%
DC Typical Characteristics
vs Collector Current
1000
125 C
VCESAT- COLLECTOR-EMITTER VOLTAGE (V)
Typical Pulsed Current Gain
- TYPICAL PULSED CURRENT GAIN
Collector-Emitter Saturation Voltage vs Collector Current
0.3 = 10
125 C
V CE = 5V
25 C - 40 C
100
0.2
25 C
10
0.1
- 40 C
h
FE
1 0.001
0.01 0.1 I C - COLLECTOR CURRENT (A)
P 36
1
1
10 100 I C - COLLECTOR CURRENT (mA)
P 36
1000
TN3440A
NPN General Purpose Amplifier
(continued)
DC Typical Characteristics
(continued)
1000
- 40 C
800 600 400 200 0
25 C 125 C
VBE(ON) BASE-EMITTER ON VOLTAGE (mV) -
VBESAT- BASE-EMITTER VOLTAGE (mV)
Base-Emitter Saturation Voltage vs Collector Current
Base-Emitter ON Voltage vs Collector Current
1000 800 600
125 C - 40 C 25 C
400 200 0
= 10
VCE = 5V
1 10 100 I C - COLLECTOR CURRENT (mA)
P 36
1 IC
10 100 - COLLECTOR CURRENT (mA)
Pr36
1000
1000
Collector-Cutoff Current vs Ambient Temperature
I CBO- COLLECTOR CURRENT (nA)
V CB = 225V
100
10
1
0.1 25
50 75 100 125 T A - AMBIENT TEMPERATURE (C)
P 36
150
AC Typical Characteristics
Collector-Base / Emitter-Base Capacitance vs. Reverse Bias Voltage Contours of Constant Gain Bandwidth Product (fT)
TN3440A
NPN General Purpose Amplifier
(continued)
AC Typical Characteristics
(continued)
Safe Operating Area TO-226
POWER DISSIPATION vs AMBIENT TEMPERATURE
1 PD - POWER DISSIPATION (W)
0.75
TO-226
0.5
0.25
0
0
25
50 75 100 o TEMPERATURE ( C)
125
150

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